Silicon carbide (SiC) is gaining traction in power electronics and automotive semiconductors as a key enabler of electromobility. Compared to traditional silicon, SiC offers several advantages, including smaller component sizes, shorter charging times, and enhanced efficiency. Its wide band-gap properties make it especially promising for the future of battery electric vehicles (BEVs). Nevertheless, processing SiC presents unique challenges. For instance, its inert nature makes it resistant to all standard wet etching techniques. RENA’s ACE process provides a breakthrough by enabling chemical etching of SiC through an innovative system design.